FCD850C
Description
The FCD850, FCD855 series of optoisolators have a silicon npn Planar Darlington phototransistor coupled to a Ga As diode. Each is mounted in a e-pin plastic dual in-line package. The FCD850/FCD850C has a minimum collector-emitter breakdown voltage of 30 V; the FCD855 I FCD855C has a minimum collectoremitter breakdown voltage of 55 V.
Glassolated TII High Current Transfer Ratio 1500 V to 6000 V Minimum Isolation
Input-to-Output 10" g Isolation Resistance Low Coupling Capacitance-Typically 1.0 p F
Absolute Maximum Ratings
Storage Temperature
-55°C to +150°C
Operating Temperature
-55°C to + 100°C
Pin Temperature (Soldering, 10 s) 260°C
Total Package Power Dissipation
= at TA 25°C,
LED plus Detector
250m W
Derate Linearly from 25°C
3.3 m W/o C
Input Diode VR Reverse Voltage IF Forward Current Ipk Peak Forward Current at
1 jl.S pulse width, 300 pps Po Power Dissipation at
TA = 25°C
Derate Linearly from 25 ° C
3.0 V eo m A
3.0 A
150 m W 1.33 m W 1°C
Output Transistor...
