FCP11N60N Datasheet - Fairchild Semiconductor

FCP11N60N N-Channel MOSFET

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCP11N60N Features

* RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A

* Ultra Low Gate Charge (Typ. Qg = 27.4 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* LCD/LED/PDP TV

* Lighting

FCP11N60N Datasheet (640.50 KB)

FCP11N60N Datasheet Preview — Preview of FCP11N60N PDF

Datasheet Details

Part number:

FCP11N60N

Manufacturer:

Fairchild Semiconductor

File Size:

640.50 KB

Description:

N-channel mosfet.

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FCP11N60N N-Channel MOSFET Fairchild Semiconductor

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