FCP11N60N Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCP11N60N Features

* RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A

* Ultra Low Gate Charge (Typ. Qg = 27.4 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* LCD/LED/PDP TV

* Lighting

FCP11N60N General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCP11N60N Datasheet (640.50 KB)

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Datasheet Details

Part number:

FCP11N60N

Manufacturer:

Fairchild Semiconductor

File Size:

640.50 KB

Description:

N-channel mosfet.
FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013 .

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FCP11N60N N-Channel MOSFET Fairchild Semiconductor

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FCP11N60N Features

FCP11N60N General Description

Datasheet Details

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