FCP11N60N - N-Channel MOSFET

Fairchild Semiconductor

FCP11N60N Datasheet Preview — Preview of FCP11N60N PDF

Datasheet Details

Part number	FCP11N60N
Manufacturer	Fairchild ↗ Semiconductor
File Size	640.50 KB
Description	N-Channel MOSFET
Datasheet	FCP11N60N-FairchildSemiconductor.pdf

FCP11N60N Product details

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

RDS(on) = 255 mΩ (Typ. ) @ VGS = 10 V, ID = 5.4 A.
Ultra Low Gate Charge (Typ. Qg = 27.4 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 130 pF).
100% Avalanche Tested.
RoHS Compliant.

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Published: Jan 14, 2015 |