FCP11N60N - N-Channel MOSFET
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, su
FCP11N60N Features
* RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
* Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)
* 100% Avalanche Tested
* RoHS Compliant Application
* LCD/LED/PDP TV
* Lighting
