FCP11N60N Datasheet, Mosfet, Fairchild Semiconductor

FCP11N60N Features

• Mosfet
• RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
• Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)

PDF File Details

Part number:

FCP11N60N

Manufacturer:

Fairchild Semiconductor

File Size:

640.50kb

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📄 Datasheet

Description:

N-channel mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep tre

FCP11N60N Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220 GDS TO-220F G Absolu

TAGS

FCP11N60N

Fairchild Semiconductor

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