FCP13N60N - N-Channel MOSFET

Fairchild Semiconductor

FCP13N60N Datasheet Preview — Preview of FCP13N60N PDF

Datasheet Details

Part number	FCP13N60N
Manufacturer	Fairchild ↗ Semiconductor
File Size	939.79 KB
Description	N-Channel MOSFET
Datasheet	FCP13N60N_FairchildSemiconductor.pdf

FCP13N60N Product details

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Features

RDS(on) = 0.244Ω ( Typ. ) @ VGS = 10V, ID = 6.5A.
Ultra Low Gate Charge ( Typ. Qg = 30.4nC).
Low Effective Output Capacitance.
100% Avalanche Tested.
RoHS Compliant TM SupreMOS August 2009.

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Published: Oct 14, 2009 |