FCP16N60N Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

FCP16N60N Features

* RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A

* Ultra Low Gate Charge (Typ. Qg = 40.2 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* LCD/LED/PDP TV

* Lighting

FCP16N60N General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCP16N60N Datasheet (619.65 KB)

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Datasheet Details

Part number:

FCP16N60N

Manufacturer:

Fairchild Semiconductor

File Size:

619.65 KB

Description:

600v n-channel mosfet.
FCP16N60N / FCPF16N60NT N-Channel SupreMOS® MOSFET FCP16N60N / FCPF16N60NT N-Channel SupreMOS® MOSFET 600 V, 16 A, 199 mΩ November 2013 F.

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FCP16N60N 600V N-Channel MOSFET Fairchild Semiconductor

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FCP16N60N Features

FCP16N60N General Description

Datasheet Details

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