FCP190N60E Datasheet - Fairchild Semiconductor

MOSFET

FCP190N60E Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 160 mΩ

* Ultra Low Gate Charge (Typ. Qg = 63 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF)

* 100% Avalanche Tested

* An Integrated Gate Resistor

* RoHS Compliant Applications

* L

FCP190N60E General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCP190N60E Datasheet (802.99 KB)

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Part number:

FCP190N60E

Manufacturer:

Fairchild Semiconductor

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802.99 KB

Description:

Mosfet.
FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, .

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FCP190N60E Features

FCP190N60E General Description

Datasheet Details

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