FCP650N80Z Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® II MOSFET December 2015 N-Channel SuperFET® II MOSFET 800 V, 10 A, 650 m Features - RDS(on) = 530 mTyp.) - Ultra Low Gate Charge (Typ. Qg = 27 nC) - Low Eoss (Typ. 2.8 uJ @ 400V) - Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF) - 100% Avalanche Tested - RoHS pliant - ESD Improved Capability Applications - AC - DC Power Supply - LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss,...