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FCP650N80Z - N-Channel MOSFET

Datasheet Summary

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • RDS(on) = 530 mTyp. ).
  • Ultra Low Gate Charge (Typ. Qg = 27 nC).
  • Low Eoss (Typ. 2.8 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 124 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

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Datasheet Details

Part number FCP650N80Z
Manufacturer Fairchild Semiconductor
File Size 620.02 KB
Description N-Channel MOSFET
Datasheet download datasheet FCP650N80Z Datasheet
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FCP650N80Z — N-Channel SuperFET® II MOSFET December 2015 FCP650N80Z N-Channel SuperFET® II MOSFET 800 V, 10 A, 650 m Features • RDS(on) = 530 mTyp.) • Ultra Low Gate Charge (Typ. Qg = 27 nC) • Low Eoss (Typ. 2.8 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC - DC Power Supply • LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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