FCPF150N65FL1
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 133 mΩ
- Ultra Low Gate Charge (Typ. Qg = 72 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 361 p F)
- 100% Avalanche Tested
- Ro HS pliant
Applications
- Tele/Server Power Supplies
- Solar Inverters
- puting Power Supplies
- FPD TV Power/Lighting
Description
Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Super FET II FRFET® MOSFET bines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications. Super FET II FRFET is very suitable for the switching power...
