FCPF9N60NT
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.
Key Features
- RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A
- Ultra low gate charge ( Typ. Qg = 22nC)
- Low effective output capacitance
- 100% avalanche tested
- RoHS compliant TM SupreMOS tm August 2009
