FDB024N04AL7 MOSFET

Fairchild Semiconductor

Description

FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resis.

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Datasheet Specifications

Part number: FDB024N04AL7
Manufacturer: Fairchild Semiconductor
File Size: 1.10 MB
Datasheet: FDB024N04AL7-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 2.0 mΩ (Typ. )@ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source D (Pin4, tab) G (Pin1) S (Pin2,3,5,6,7)

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FDB024N04AL7 MOSFET Fairchild Semiconductor

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