Datasheet Details
- Part number
- FDB024N04AL7
- Manufacturer
- Fairchild Semiconductor
- File Size
- 1.10 MB
- Datasheet
- FDB024N04AL7-FairchildSemiconductor.pdf
- Description
- MOSFET
FDB024N04AL7 Description
FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resis.
FDB024N04AL7 Features
* RDS(on) = 2.0 mΩ (Typ. )@ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
FDB024N04AL7 Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies
123 567
4
D2-PAK (TO-263)
1. Gate
2. Source 3. Source 4. Drain
5. Source
6. Source 7. Source
D (Pin4, tab)
G (Pin1)
S (Pin2,3,5,6,7)
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