Datasheet Details
- Part number
- FDB024N08BL7
- Manufacturer
- Fairchild Semiconductor
- File Size
- 569.68 KB
- Datasheet
- FDB024N08BL7-FairchildSemiconductor.pdf
- Description
- MOSFET
FDB024N08BL7 Description
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.
FDB024N08BL7 Features
* RDS(on) = 1.7 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr = 112 nC
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* RoHS
FDB024N08BL7 Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies
123 567
4
D2-PAK (TO-263)
1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source
D(Pin4, tab)
G (Pin1)
S(Pin2,3,5,6,7)
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