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FDB024N08BL7 MOSFET

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Description

FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

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Features

* RDS(on) = 1.7 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr = 112 nC
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* RoHS

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source D(Pin4, tab) G (Pin1) S(Pin2,3,5,6,7)

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