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FDB0250N807L - 80V 240A N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Industrial Motor Dr

Features

  • Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.7 mΩ at VGS = 8 V, ID = 27 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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Datasheet Details

Part number FDB0250N807L
Manufacturer Fairchild Semiconductor
File Size 317.56 KB
Description 80V 240A N-Channel MOSFET
Datasheet download datasheet FDB0250N807L Datasheet
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FDB0250N807L N-Channel PowerTrench® MOSFET March 2016 FDB0250N807L N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.7 mΩ at VGS = 8 V, ID = 27 A „ Fast Switching Speed „ Low Gate Charge „ High Performance Trench Technology for Extremely Low RDS(on) „ High Power and Current Handling Capability „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
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