FDB0260N1007L
Features
- Max r DS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
123 567
1. Gate 2. Source/Kelvin Sense
3. Source/Kelvin Sense
4. Drain
5. Source
6. Source
7. Source
D2-PAK (TO263)
D(Pin4, tab)
G (Pin1)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source...
