FDB8832 Datasheet | Fairchild Semiconductor

FDB8832 N-Channel Logic Level Power Trench® MOSFET MPLEMENTATION October 2011 N-Channel Logic Level Power Trench® MOSFET 30V, 80A, 2.1mΩ Features - Typ r DS(on) = 1.5mΩ at VGS = 5V, ID = 80A - Typ Qg(5) = 100n C at VGS = 5V - Low Miller Charge Applications - Starter / Alternator Systems - Electronic Power Steering Systems - DC-DC Converters - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Ro HS pliant AD FREE I ©2011 Fairchild Semiconductor Corporation FDB8832 Rev. A1 .fairchildsemi. FDB8832 N-Channel Logic Level Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 165o C, VGS = 10V) Drain Current Continuous (TC < 163o C, VGS = 5V) Drain Current Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25o...