FDBL0150N60
Features
- Typical RDS(on) = 1.1 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 130 n C at VGS = 10V, ID = 80 A
- UIS Capability
- Ro HS pliant
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
S For current package drawing, please refer to the Fairchild web‐ site at http://.fairchildsemi./dwg/PS/PSOF08A.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate Above 25o C
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 60 ±20 240
See Figure 4 614 357...
