FDD10AN06A0_F085 - MOSFET

Features

rDS(ON) = 9.4mΩ (Typ. ), VGS = 10V, ID = 50A.
Qg(tot) = 28nC (Typ. ), VGS = 10V.
Low Miller Charge.
Low Qrr Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).
Qualified to AEC Q101.
RoHS Compliant Formerly developmental type 82560 Dec 2012.

Fairchild Semiconductor

Datasheet Details

Part number	FDD10AN06A0_F085
Manufacturer	Fairchild Semiconductor (now Onsemi)
File Size	366.23 KB
Description	MOSFET
Datasheet	FDD10AN06A0_F085 Datasheet
Additional preview pages of the FDD10AN06A0_F085 datasheet.

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Full PDF Text Transcription

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FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.

Published: Feb 15, 2016 |