FDD10N20LZ

MOSFET

Fairchild Semiconductor

FDD10N20LZ Features

* RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A

* Low Gate Charge (Typ. 12 nC)

* Low Crss (Typ. 11 pF)

* 100% Avalanche Tested

* Improved dv/dt Capability

* ESD Improved Capability

* RoHS Compliant Applications

* Lighting

* U

FDD10N20LZ General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching po.

FDD10N20LZ Datasheet (587.14 KB)

FDD10N20LZ Datasheet Preview — Preview of FDD10N20LZ PDF

Datasheet Details

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FDD10N20LZ

Manufacturer:

Fairchild Semiconductor

File Size:

587.14 KB

Description:

Mosfet.

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FDD10N20LZ MOSFET Fairchild Semiconductor

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FDD10N20LZ Features

FDD10N20LZ General Description

Datasheet Details

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