FDD3670 - 100V N-Channel PowerTrench MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FDD3670
Manufacturer	Fairchild (now onsemi)
File Size	167.10 KB
Description	100V N-Channel PowerTrench MOSFET
Datasheet	FDD3670 Datasheet

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Overview

FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench.

Key Features

34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (57 nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
Continuous.
Pulsed TA=25 C unless otherwise noted o Para.

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