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FDD3670 100V N-Channel PowerTrench MOSFET

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Description

FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDD3670
Manufacturer
Fairchild Semiconductor
File Size
167.10 KB
Datasheet
FDD3670_FairchildSemiconductor.pdf
Description
100V N-Channel PowerTrench MOSFET

Features

* 34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V
* Low gate charge (57 nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability. D D G S TO-252

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