FDD3670 - 100V N-Channel PowerTrench MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FDD3670
Manufacturer	Fairchild (now onsemi)
File Size	167.10 KB
Description	100V N-Channel PowerTrench MOSFET
Datasheet	FDD3670 Datasheet

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Overview

FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench.

Key Features

34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (57 nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
Continuous.
Pulsed TA=25 C unless otherwise noted o Para.

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