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FDD86102LZ

N-Channel MOSFET

FDD86102LZ Features

* General Description

* Shielded Gate MOSFET Technology

* Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A

* Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A

* HBM ESD protection level > 6 kV typical (Note 4)

* Very low Qg and Qgd compared to competing trench technol

FDD86102LZ General Description



* Shielded Gate MOSFET Technology

* Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A

* Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A

* HBM ESD protection level > 6 kV typical (Note 4)

* Very low Qg and Qgd compared to competing trench technologies

* Fast .

FDD86102LZ Datasheet (486.00 KB)

Preview of FDD86102LZ PDF

Datasheet Details

Part number:

FDD86102LZ

Manufacturer:

Fairchild Semiconductor

File Size:

486.00 KB

Description:

N-channel mosfet.
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Featu.

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FDD86102LZ N-Channel MOSFET Fairchild Semiconductor

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