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FDD86102LZ - N-Channel MOSFET

Description

Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast

Features

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Datasheet Details

Part number FDD86102LZ
Manufacturer Fairchild Semiconductor
File Size 486.00 KB
Description N-Channel MOSFET
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FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
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