* General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
* HBM ESD protection level > 6 kV typical (Note 4)
* Very low Qg and Qgd compared to competing trench technol
FDD86102LZ Datasheet (486.00 KB)
FDD86102LZ
Fairchild Semiconductor
486.00 KB
N-channel mosfet.
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86102LZ
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
Featu.
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