FDD86102LZ
Fairchild Semiconductor
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N-channel mosfet.
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FDD86102LZ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDD86102LZ
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot v.
FDD86102 - N-Channel MOSFET
(Fairchild Semiconductor)
FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET
FDD86102
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 36 A, 24 mΩ
March 2015
Features
G.
FDD86110 - N-Channel MOSFET
(Fairchild Semiconductor)
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86110
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 50 A, 10.2 mΩ
Features
.
FDD86113LZ - N-Channel MOSFET
(Fairchild Semiconductor)
FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86113LZ
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 5.5 A, 104 mΩ
Feat.
FDD86069-F085 - N-Channel Power MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel
100 V, 10.5 mW, 51 A
FDD86069-F085
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to.
FDD86250 - N-Channel MOSFET
(Fairchild Semiconductor)
FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET
FDD86250
April 2015
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 51 A, 22 mΩ
Features
.
FDD86250 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
FDD86250
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100.
FDD86252 - N-Channel MOSFET
(Fairchild Semiconductor)
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
FDD86252
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 27 A, 52 mΩ
March 2015
Features
G.
FDD86326 - N-Channel MOSFET
(Fairchild Semiconductor)
FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 37 A, 23 mΩ
Features
G.
FDD86367 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
80 V, 100 A, 4.2 mW
FDD86367
Features
• Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 68 nC.