Download FDD9407_F085 Datasheet PDF
Fairchild Semiconductor
FDD9407_F085
Features - Typ r DS(on) = 1.6mΩ at VGS = 10V, ID = 80A - Typ Qg(tot) = 86n C at VGS = 10V, ID = 80A - UIS Capability - Ro HS pliant - Qualified to AEC Q101 Applications - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter/alternator - Distributed Power Architectures and VRM - Primary Switch for 12V Systems August 2013 DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Power Dissipation Derate above 25o C TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 100 See Figure4 171 227 1.52 -55 to + 175 0.66 52 Units V...