FDMA1430JP -30V -2.9A Integrated P-Channel MOSFET and BJT

Fairchild Semiconductor

Description

FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ July 20.
This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications.

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Datasheet Specifications

Part number: FDMA1430JP
Manufacturer: Fairchild Semiconductor
File Size: 356.65 KB
Datasheet: FDMA1430JP-FairchildSemiconductor.pdf
Description: -30V -2.9A Integrated P-Channel MOSFET and BJT

Features

* Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
* Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
* Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
* Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A
* Low profile - 0.8 mm maximum - in the new package Mic

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FDMA1430JP -30V -2.9A Integrated P-Channel MOSFET and BJT Fairchild Semiconductor

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