FDMC2512SDC Datasheet - Fairchild Semiconductor

FDMC2512SDC N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the.

FDMC2512SDC Features

* Dual CoolTM Top Side Cooling PQFN package

* Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A

* Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A

* High performance technology for extremely low rDS(on)

* SyncFET Schottky Body Diode

* RoHS Compliant Genera

FDMC2512SDC Datasheet (243.10 KB)