FDMC8878 - N-Channel Power Trench MOSFET
* Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A * Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A * Low Profile - 1mm max in Power 33 * RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been
