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FDMC8878 - N-Channel Power Trench MOSFET

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FDMC8878 Product details

Description

Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.It has been optimized for power management applications.Application DC - DC Conversion Bottom Top 5 6 7 8 D 1 D D D D D 5 6 7 8 4 G 3 S 2 S 1 S www.DataSheet4U.com D S S S G 4 3 2 D

Features

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