Part number:
FDMC8878
Manufacturer:
Fairchild Semiconductor
File Size:
438.21 KB
Description:
N-channel power trench mosfet.
* General Description
* Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A
* Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A
* Low Profile - 1mm max in Power 33
* RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench p
FDMC8878 Datasheet (438.21 KB)
FDMC8878
Fairchild Semiconductor
438.21 KB
N-channel power trench mosfet.
📁 Related Datasheet
FDMC8878 - N-Channel Power MOSFET
(ON Semiconductor)
FDMC8878
N-Channel POWERTRENCH) MOSFET
30 V, 16.5 A, 14 mW
This N−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench .
FDMC8854 - N-Channel Power Trench MOSFET
(Fairchild Semiconductor)
FDMC8854 N-Channel PowerTrench® MOSFET
February 2007
FDMC8854 N-Channel Power Trench® MOSFET
30V, 15A, 5.7mΩ Features General Description
Max rDS(.
FDMC8854 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
30 V, 15 A, 5.7 mW
FDMC8854
General Description This N−Channel MOSFET is a rugged gate version of onsemi’s
advanced .
FDMC8882 - MOSFET
(Fairchild Semiconductor)
FDMC8882 N-Channel Power Trench® MOSFET
FDMC8882
N-Channel Power Trench® MOSFET
30 V, 16 A, 14.3 m:
May 2014
Features
General Description
Max r.
FDMC8882 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
30 V, 16 A, 14.3 mohm
FDMC8882
Description This N−Channel MOSFET is produced using onsemi’s advanced
POWETRENCH proce.
FDMC8884 - N-Channel Power Trench MOSFET
(Fairchild)
FDMC8884 N-Channel Power Trench® MOSFET
April 2012
FDMC8884
N-Channel Power Trench® MOSFET
30 V, 15 A, 19 mΩ
Features
Max rDS(on) = 19 mΩ at VGS =.
FDMC8010 - N-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDMC8010 N-Channel PowerTrench® MOSFET
FDMC8010
N-Channel PowerTrench® MOSFET
30 V, 75 A, 1.3 mΩ
Features
General Description
April 2014
Max .
FDMC8010 - N-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET – N-Channel, POWERTRENCH)
30 V, 75 A, 1.3 mW
FDMC8010
General Description This N−Channel MOSFET is produced using o.