FDMC8878
Features
General Description
- Max r DS(on) = 14mΩ at VGS = 10V, ID = 9.6A
- Max r DS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A
- Low Profile
- 1mm max in Power 33
- Ro HS pliant tm
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
Application
- DC
- DC Conversion
Bottom
Top
8 D 1 D
5 6 7 8
4 G 3 S 2 S 1 S
..
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 16.5 38 9.6 60 31 2.1 -55 to +150 W °C A Units V V
Thermal Characteristics
RθJC RθJA Thermal Resistance,...
