FDMS0309AS - MOSFET
* Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A * Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A * Advanced package and silicon combination for low rDS(on) and high efficiency * SyncFETTM Schottky Body Diode * MSL1 Robust Package Design * 100% UIL tes
