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FDMS0309AS - MOSFET

Description

Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 Robust Package Design 100% UIL tes

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Datasheet Details

Part number FDMS0309AS
Manufacturer Fairchild Semiconductor
File Size 323.19 KB
Description MOSFET
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FDMS0309AS N-Channel PowerTrench® SyncFETTM FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ January 2015 Features General Description „ Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A „ Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ SyncFETTM Schottky Body Diode „ MSL1 Robust Package Design „ 100% UIL tested „ RoHS Compliant The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
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