FDMS7608S
Description
Q1: N-Channel Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual MLP package.
Applications
- Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 3) TC = 25 °C TA = 25 °C
