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FDMS8050 - MOSFET

General Description

Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to min

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMS8050 N-Channel PowerTrench® MOSFET March 2015 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description „ Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A „ Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).