FDMS8050 Description
Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate...
FDMS8050 Key Features
- Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A
- Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant