FDMS8050 - MOSFET
* Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A * Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to min
