FDMS8090
Overview
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
- Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A
- Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- 100% UIL tested
- RoHS Compliant
