FDP3205
Features
N-Channel Power Trench® MOSFET
55V, 100A, 7.5mΩ Description
- This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
- High performance trench technology for extermly low RDS(on)
- High power and current handing capability
- Ro HS pliant
TO-220 FDP Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted
.. Symbol VDSS
VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation
- Derate above 25o C (TC = 25o C) -Continuous (TC = 25o C)
- Pulsed (Note 2) (Note 1) Ratings 55 ±20 100 390 365 150 1.0 -55 to +175 Units V V A A m J W W/o C o C
Operating and Storage Temperature Range
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance,...
