FDP3651U Datasheet, Mosfet, Fairchild Semiconductor

FDP3651U Features

  • Mosfet
  • RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
  • High Performance Trench Technology for Extremely Low RDS(on)
  • Low Miller Charge
  • UIS Capability (Si

PDF File Details

Part number:

FDP3651U

Manufacturer:

Fairchild Semiconductor

File Size:

665.32kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: FDP3651U 📥 Download PDF (665.32kb)
Page 2 of FDP3651U Page 3 of FDP3651U

FDP3651U Application

  • Applications
  • Consumer Appliances
  • Synchronous Rectification
  • Battery Protection Circuit
  • Motor drives and Unint

TAGS

FDP3651U
N-Channel
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FDP3651U - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 1.

FDP3652 - N-Channel MOSFET (Fairchild Semiconductor)
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET October 2013 FDP3652 / FDB3652 N-Channel PowerTrench® MOSFET 100 V, 61 A, 16 mΩ Features Applica.

FDP3632 - N-Channel MOSFET (Fairchild Semiconductor)
FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), .

FDP3632 - N-Channel MOSFET (ON Semiconductor)
MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (t.

FDP3632 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9m.

FDP3672 - N-Channel MOSFET (Fairchild Semiconductor)
FDP3672 — N-Channel PowerTrench® MOSFET November 2013 FDP3672 N-Channel PowerTrench® MOSFET 105 V, 41 A, 33 mΩ Features • RDS(on) = 25 mΩ ( Typ.) @.

FDP3672 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 105V ·Static drain-source on-resistance: RDS(on) ≤ 3.

FDP3682 - N-Channel MOSFET (Fairchild Semiconductor)
FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ March 2013 Features • RDS(on) =.

FDP3682 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T.

FDP3682 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 3.

Stock and price

onsemi
MOSFET N-CH 100V 80A TO220-3
DigiKey
FDP3651U
641 In Stock
Qty : 2000 units
Unit Price : $0.96
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts