Download FDP3651U Datasheet PDF
Fairchild Semiconductor
FDP3651U
Features - RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A - High Performance Trench Technology for Extremely Low RDS(on) - Low Miller Charge - UIS Capability (Single Pulse and Repetitive Pulse) Applications - Consumer Appliances - Synchronous Rectification - Battery Protection Circuit - Motor drives and Uninterruptible Power Supplie s - Micro Solar Inverter GD S TO-220 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGSS ID PD EAS TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation Single Pulsed Avalanche Energy Operating and Storage Temperature Maximum lead temperature soldering purposes, 1/8” from case for 5 seconds (Note 2) (Note 1) FDP3651U 100 ±20 80 320 255 266 -55 to 175 300 Unit V V A W m J °C °C Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient, Max. Thermal Resistance , Junction to Case, Max. 62 0.59 °C/W °C/W Package Marking and Ordering...