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FDPF3860T N-Channel MOSFET

FDPF3860T Description

FDPF3860T * N-Channel PowerTrench® MOSFET December 2013 FDPF3860T N-Channel PowerTrench® MOSFET 100 V, 20 A, 38.2 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDPF3860T Features

* RDS(on) = 29.1 mΩ (Typ. ) @ VGS = 10 V, ID = 5.9 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDPF3860T Applications

* Consumer Appliances
* LCD/LED/PDP TV
* Synchronous Rectification
* Uninterruptible Power Supply
* Micro Solar Inverter D GDS G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL

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N-Channel MOSFET Fairchild Semiconductor
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