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FDPF680N10T N-Channel MOSFET

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Description

FDPF680N10T * N-Channel PowerTrench® MOSFET November 2013 FDPF680N10T N-Channel PowerTrench® MOSFET 100 V, 12 A, 68 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

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Features

* RDS(on) = 54 mΩ (Typ. ) @ VGS = 10 V, ID = 6 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Consumer Appliances
* LCD/LED/PDP TV
* Synchronous Rectification
* Uninterruptible Power Supply
* Micro Solar Inverter D GDS TO-220F G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to S

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