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FDS86252 - MOSFET

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FDS86252 Product details

Description

Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MO

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Fairchild Semiconductor FDS86252-like datasheet

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