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FDS86252 MOSFET

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Description

FDS86252 N-Channel Power Trench® MOSFET April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 mΩ .
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4. Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3. High performance trench tech.

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FDS86252 MOSFET Fairchild Semiconductor
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