Datasheet Details
| Part number | FDS86252 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 215.78 KB |
| Description | MOSFET |
| Download | FDS86252 Download (PDF) |
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Overview: FDS86252 N-Channel Power Trench® MOSFET April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.
| Part number | FDS86252 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 215.78 KB |
| Description | MOSFET |
| Download | FDS86252 Download (PDF) |
|
|
|
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Application DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Po
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