FDS86252 Overview
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize...
FDS86252 Key Features
- Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
- Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- 100% UIL Tested
- RoHS pliant
- DC-DC Conversion
- Pulsed