Datasheet Details
- Part number
- FDS8842NZ
- Manufacturer
- Fairchild Semiconductor
- File Size
- 316.27 KB
- Datasheet
- FDS8842NZ_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A. Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A. HBM ESD protection level of 4.4 kV typical(note 3). High performance trench technology for extremely low rDS(on) and fast switching. High power and current handling capability. Termination is Lead-free and RoHS Compliant The FDS8842NZ has been designed to minimize losses in power conversion application.Advancements in both silicon and packa.
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