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FDS8842NZ Datasheet - Fairchild Semiconductor

FDS8842NZ N-Channel MOSFET

* Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A * Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A * HBM ESD protection level of 4.4 kV typical(note 3) * High performance trench technology for extremely low rDS(on) and fast switching * High power and curre.

FDS8842NZ_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDS8842NZ

Manufacturer:

Fairchild Semiconductor

File Size:

316.27 KB

Description:

N-channel mosfet.

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FDS8842NZ FDS8842NZ N-Channel MOSFET Fairchild Semiconductor

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