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FDU6780A N-Channel MOSFET

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Description

FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Features

* Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A
* Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A
* 100% UIL test

Applications

* Vcore DC-DC for Desktop Computers and Servers
* VRM for Intermediate Bus Architecture D D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol www. DataSheet4U. com VDS VGS Parameter Drain to Source Voltage Gate t

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