FDU8880 - N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDU8880 Datasheet Preview — Preview of FDU8880 PDF

Datasheet Details

Part number	FDU8880
Manufacturer	Fairchild ↗ Semiconductor
File Size	348.69 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDU8880-FairchildSemiconductor.pdf

FDU8880 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters tm

Features

rDS(ON) = 10mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 13mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability D GDS I-PAK (TO-251AA) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS.

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Published: Jan 15, 2016 |