FDW2508P - Dual P-Channel 1.8 V Specified PowerTrench MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDW2508P
Manufacturer	Fairchild Semiconductor
File Size	135.27 KB
Description	Dual P-Channel 1.8 V Specified PowerTrench MOSFET
Datasheet	FDW2508P_FairchildSemiconductor.pdf

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

6 A,.
12 V. RDS(ON) = 18 mΩ @ VGS =.
4.5 V RDS(ON) = 22 mΩ @ VGS =.
2.5 V RDS(ON) = 30 mΩ @ VGS =.
1.8 V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package.

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Published: Mar 30, 2005 |