FGA15N120ANTDTU Datasheet (PDF) Download
Fairchild Semiconductor
FGA15N120ANTDTU

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Key Features

  • NPT Trench Technology, Positive temperature coefficient
  • Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
  • Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C
  • Extremely Enhanced Avalanche Capability November 2013