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FGA40S65SH Datasheet IGBT

Manufacturer: Fairchild (now onsemi)

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General Description

Using Fairchild’s proprietary trench design and advanced field stop IGBT technology, 650V field stop offers superior conduction and switching performance and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Applications • Induction Heating, MWO G CE TO-3PN Absolute Maximum Ratings Symbol VCES VGES IC ILM (1) ICM (2) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC @ TC = 25oC Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Overview

FGA40S65SH — 650 V, 40 A Field Stop Trench IGBT FGA40S65SH 650 V, 40 A Field Stop Trench IGBT February.

Key Features

  • Maximum Junction Temperature : TJ = 175oC.
  • Positive Temperaure Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.4 V ( Typ. ) @ IC = 40 A.
  • 100% of the Parts tested for ILM(1).
  • High Input Impedance.
  • Tighten Parameter Distribution.
  • RoHS Compliant General.

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