FGL12040WD Datasheet, Igbt, Fairchild Semiconductor

FGL12040WD Features

• Igbt
• Maximum Junction Temperature : TJ = 150oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• Low Saturation Voltage: VCE(sat) =2.3 V @ IC = 40 A

PDF File Details

Part number:

FGL12040WD

Manufacturer:

Fairchild Semiconductor

File Size:

1.02MB

Download:

📄 Datasheet

Description:

Igbt. Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for w

FGL12040WD Application

• Applications where low conduction and switching losses are essential. Applications
• Only for Welder C G CE TO-264 Absolute Maximum Rati

TAGS

FGL12040WD

Fairchild Semiconductor

📁 Related Datasheet

FGL35N120FTD - IGBT (Fairchild Semiconductor)
FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT November 2013 Features • Field Stop Trench Tech.

FGL40N120AN - 1200V NPT IGBT (Fairchild Semiconductor)
FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @.

FGL40N120AND - 1200V NPT IGBT (Fairchild Semiconductor)
FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6.

FGL40N150 - IGBT (Fairchild Semiconductor)
FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The.

FGL40N150D - IGBT (Fairchild Semiconductor)
FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The.

FGL60N100BNTD - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

FGL60N100D - IGBT (Fairchild Semiconductor)
FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in con.

FGL60N170D - IGBT (Fairchild Semiconductor)
FGL60N170D October 2001 IGBT FGL60N170D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switchi.

FG-xx - EMC Filters - Single-Phase Filters - FG/FGR Chasis Panel Mounting Medical Use Single Phase (Premo)
.. .

FG030561DSSWBG03 - TFT Module (Data Image)
Confidential Document DATA IMAGE CORPORATION TFT Module Specification ITEM NO.: FG030561DSSWBG03 Table of Contents 1. COVER & CONTENTS ‚‚‚‚‚‚‚‚‚‚‚‚‚‚‚.