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FJP3835 Datasheet - Fairchild Semiconductor

FJP3835 Power Amplifier

FJP3835 FJP3835 Power Amplifier High Current Capability : IC=8A High Power Dissipation Wide S.O.A 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperatu.

FJP3835 Datasheet (60.24 KB)

Preview of FJP3835 PDF

Datasheet Details

Part number:

FJP3835

Manufacturer:

Fairchild Semiconductor

File Size:

60.24 KB

Description:

Power amplifier.

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FJP3835 Power Amplifier Fairchild Semiconductor

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