* FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
* 3.0 A Peak Output Current Driving Capability for Medium- Power IGBT/MOSFET
* Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swi
FOD8342T Datasheet (346.01 KB)
FOD8342T
Fairchild Semiconductor
346.01 KB
High speed gate drive optocoupler.
FOD8342, FOD8342T
* 3.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin
March 2016
FOD8342, FOD8342T 3.0 A O.
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