FPN660A Datasheet - Fairchild Semiconductor

FPN660A PNP Low Saturation Transistor

FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 .

FPN660A_FairchildSemiconductor.pdf