FQA7N90M 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQA7N90M January 2002 QFET FQA7N90M 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQA7N90M
Manufacturer: Fairchild Semiconductor
File Size: 678.29 KB
Datasheet: FQA7N90M_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 7A, 900V, RDS(on) = 1.8Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! TO-3P G DS FQA Series ! S Absolute Maximum R

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900V N-Channel MOSFET Fairchild Semiconductor

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