FQA7N90M

900V N-Channel MOSFET

Fairchild Semiconductor

FQA7N90M Features

* 7A, 900V, RDS(on) = 1.8Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! TO-3P G DS FQA Series ! S Absolute Maximum R

FQA7N90M General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA7N90M Datasheet (678.29 KB)

FQA7N90M Datasheet Preview — Preview of FQA7N90M PDF

Datasheet Details

Part number:

FQA7N90M

Manufacturer:

Fairchild Semiconductor

File Size:

678.29 KB

Description:

900v n-channel mosfet.

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FQA7N90M 900V N-Channel MOSFET Fairchild Semiconductor

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FQA7N90M Features

FQA7N90M General Description

Datasheet Details

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