FQE10N20C Datasheet (Fairchild Semiconductor)

FQE10N20C, 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQE10N20C Features

* 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V

* Low gate charge ( typical 20 nC)

* Low Crss ( typical 40.5 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability GD S TO-126 FQE Series G! D !

* ◀▲

* ! S Absolute Maximum