FQL40N50F Datasheet (Fairchild Semiconductor)

FQL40N50F, 500V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQL40N50F Features

* 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A

* Low Gate Charge (Typ. 155 nC)

* Low Crss (Typ. 95 pF)

* 100% Avalanche Tested

* Fast Recovery Body Diode (Max. 250 ns) D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted.