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FQL40N50F

500V N-Channel MOSFET

FQL40N50F Features

* 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A

* Low Gate Charge (Typ. 155 nC)

* Low Crss (Typ. 95 pF)

* 100% Avalanche Tested

* Fast Recovery Body Diode (Max. 250 ns) D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted.

FQL40N50F General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQL40N50F Datasheet (798.18 KB)

Preview of FQL40N50F PDF

Datasheet Details

Part number:

FQL40N50F

Manufacturer:

Fairchild Semiconductor

File Size:

798.18 KB

Description:

500v n-channel mosfet.

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TAGS

FQL40N50F 500V N-Channel MOSFET Fairchild Semiconductor

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