FQL40N50F - 500V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQL40N50F
Manufacturer	Fairchild ↗ Semiconductor
File Size	798.18 KB
Description	500V N-Channel MOSFET
Datasheet	FQL40N50F_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

40 A, 500 V, RDS(on) = 110 mΩ (Max. ) @ VGS = 10 V, ID = 20 A.
Low Gate Charge (Typ. 155 nC).
Low Crss (Typ. 95 pF).
100% Avalanche Tested.
Fast Recovery Body Diode (Max. 250 ns) D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltag.

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Published: Apr 1, 2005 |