FQP11N40C
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 85 pF)
- 100% Avalanche Tested
