FQP2P25 Datasheet | Fairchild Semiconductor

April 2000 QFET 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features - - - - - - -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 n C) Low Crss ( typical 6.5 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! G! G TO-220 FQP...