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FQPF5N50CF

Low gate charge

FQPF5N50CF Features

* 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V

* Low gate charge ( typical 18nC)

* Low Crss ( typical 15pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors

FQPF5N50CF General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQPF5N50CF Datasheet (685.85 KB)

Preview of FQPF5N50CF PDF

Datasheet Details

Part number:

FQPF5N50CF

Manufacturer:

Fairchild Semiconductor

File Size:

685.85 KB

Description:

Low gate charge.

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FQPF5N50CF Low gate charge Fairchild Semiconductor

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