Part number:
G5N120BND
Manufacturer:
Fairchild Semiconductor
File Size:
233.09 KB
Description:
Hgtg5n120bnd.
G5N120BND Datasheet (233.09 KB)
Datasheet Details
G5N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
G5N120BND Datasheet (233.09 KB)
Datasheet Details
G5N120BND
Fairchild Semiconductor
233.09 KB
Hgtg5n120bnd.
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