G7N60A4D Datasheet - Fairchild Semiconductor

G7N60A4D, HGTG7N60A4D

Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D,.

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Datasheet Details

Part number:

G7N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

152.16 KB

Description:

HGTG7N60A4D

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used

Applications

* operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49333. Ordering Information PART NUMBER PACKAGE BRAND HGTG7N60A4D HGTP7N60A4D TO-247 TO-220AB G7N60A4D G7N60A4D

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