Part number:
G7N60A4D
Manufacturer:
Fairchild Semiconductor
File Size:
152.16 KB
Description:
Hgtg7n60a4d.
G7N60A4D Datasheet (152.16 KB)
Datasheet Details
G7N60A4D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used
G7N60A4D Datasheet (152.16 KB)
Datasheet Details
G7N60A4D
Fairchild Semiconductor
152.16 KB
Hgtg7n60a4d.
📁 Related Datasheet
G7N60C UFS Series N-Channel IGBT (Fairchild Semiconductor)
G7N65 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GOFORD)
G700P06 P-Channel Enhancement Mode Power MOSFET (GOFORD)
G700P06J P-Channel Enhancement Mode Power MOSFET (GOFORD)
G700P06LL P-Channel Enhancement Mode Power MOSFET (GOFORD)
G700P06T P-Channel Enhancement Mode Power MOSFET (GOFORD)
G703B LED (IDEA)
G705 Resistor-Programmable SOT Temperature Switches (Global Mixed-mode Technology)
G705SD SCHOTTKY BARRIER DIODE (GTM)
G706SD SCHOTTKY BARRIER DIODE (GTM)
G7N60A4D Distributor
