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G7N60A4D Datasheet - Fairchild Semiconductor

G7N60A4D - HGTG7N60A4D

G7N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used

G7N60A4D-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

G7N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

152.16 KB

Description:

Hgtg7n60a4d.

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