* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used
G7N60A4D Datasheet (152.16 KB)
G7N60A4D
Fairchild Semiconductor
152.16 KB
Hgtg7n60a4d.
Data Sheet
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
January 2005
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG7N60A4D,.
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