PF8N60C - FQPF8N60C

Fairchild Semiconductor

Datasheet Details

Part number	PF8N60C
Manufacturer	Fairchild Semiconductor
File Size	924.38 KB
Description	FQPF8N60C
Datasheet	PF8N60C-FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
Low gate charge ( typical 28 nC).
Low Crss ( typical 12 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Curren.

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Published: Feb 15, 2015 |